Request InfoOpto Diode CorporationNEWBURY PARK, Calif., May 14, 2012 — Opto Diode Corp. has introduced the OD-110W, the second product in the superhigh-power series of gallium aluminum arsenide infrared emitters. Featuring a very uniform optical beam, the device is designed for military imaging applications. It features four wire bonds on die corners and a hermetically sealed three-lead standard TO-39 package, with all surfaces gold-plated for added durability. Typical total power output is 140 mW (minimum 80 mW), with a peak emission wavelength at 850 nm. Power dissipation is 1000 mW at absolute maximum ratings of 25 °C (case) and a continuous...See full productRelated content from Photonics MediaPRODUCTSPhotonics.com 4/12/2023Security Edge AI System on ChipThe CV72S 4K system on chip (SoC) from Ambarella Inc. is designed for mainstream, professional security cameras and built on the CVflow® 3.0 AI architecture. 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