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Silicon Avalanche Photodiodes

Photonics.com
Aug 2018
Marktech OptoelectronicsRequest Info
 
LATHAM, N.Y., Aug. 23, 2018 — Silicon Avalanche PhotodiodesMarktech Optoelectronics has announced standard and custom silicon avalanche photodiodes (Si APDs) in quantities from prototype to OEM volumes.

The APDs offer low-level light and short pulse detections of wavelengths between 400 and 1100 nm. They are offered with choice of either a 230- or 500-µm active diameter; optical sensitivity optimizations for 800- or 905-nm peak response; an internal gain mechanism; high gain at low bias voltage; extremely fast rise times as low as 300 ps; frequency response to 1 GHz; and a low breakdown voltage of 80 to 200 V. Units are also RoHS compliant.

Standard Si APDs are offered with multiple customization options including operational voltage selection and VBR binning, wavelength specific bandpass filtering, and hybridization. Package options include hermetically sealed TO metal cans, plastic, and cost-effective SMD types, with additional customization by request.


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