Search
Menu
Gentec Electro-Optics Inc   - Measure With Gentec Accuracy LB

Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor

Microsemi Corp.Request Info
 
Facebook X LinkedIn Email
The 40 mOhm MSC040SMA120B next-generation 1200-V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) from Microsemi Corp. is a SiC solution designed for power applications in rugged environments.

The SiC MOSFET product family is avalanche rated, demonstrating the devices' ruggedness for industrial, automotive and commercial aviation power applications with high short-circuit withstand rating for robust operation. SiC MOSFETs and new SiC Schottky-barrier diodes are designed with high repetitive unclamped inductive switching (UIS) capability at rated current with no degradation or failures.

The SiC MOSFETs maintain high UIS capability at approximately 10 to 15 J/cm2 and robust short circuit protection at 3 to 5 μs.


Published: March 2018
REQUEST INFO ABOUT THIS PRODUCT
* First Name:
* Last Name:
* Email Address:
* Company:
* Country:
Message:


When you click "Send Request", we will record and send your personal contact information to Microsemi Corp. by email so they may respond directly. You also agree that Photonics Media may contact you with information related to this inquiry, and that you have read and accept our Privacy Policy and Terms and Conditions of Use.

Register or login to auto-populate this form:
Login Register
* Required

ProductsSilicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor40 mOhm MSC040SMA120BMaterialsMOSFETMicrosemisemiconductorsOpticsAmericas

We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.