Silicon Photodiodes
OSI Optoelectronics Inc.Request Info
HAWTHORNE, Calif., Nov. 28, 2016 — 
Annular Quadrant Silicon Photodiodes from OSI Optoelectronics Inc. operate between 350 and 1100 nm for backscatter reflectivity measurements.
The new silicon quadrant detector features an annular package design and includes a 200-µm laser-cut hole on the chip. The header enables a fiber to be coupled from the back of the detector, ensuring that the detector sensing area is always normal to the direction of the light, reducing the need for angular compensation during backscatter measurements.
Available in TO-5 and TO-8 metal packages, the active area on each element is 1.6 and 19.6 mm2, respectively. The element gap between the segments is ~0.10 mm. The spectral range is from 190 to 1100 nm with a typical peak wavelength of 980 nm. With responsivity at 790 nm, the typical A/W is 0.52.
https://www.osioptoelectronics.com
https://www.photonics.com/Buyers_Guide/OSI_Optoelectronics_Inc/c11255
Photonics.com
Nov 2016