Silicon Precursors
Gelest Inc.Request Info
MORRISVILLE, Pa., July 30, 2019 — 
Silicon source precursors for silicon nitride (SiN) ultrathin film deposition in semiconductor applications have been announced by Gelest Inc.
SiN precursors are useful for a variety of deposition processes, especially those requiring a low thermal budget. The precursors are designed with a combination of physical properties, thermal stability, and chemical reactivity to meet the needs of chemical vapor deposition, plasma enhanced CVD, atomic layer deposition, and liquid phase deposition.
The precursors are supported with film deposition and process data from the company’s thin film applications lab.
https://www.gelest.com
/Buyers_Guide/Gelest_Inc/c5392
Published: July 2019
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