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UV-Enhanced Photodiode

Opto Diode CorporationRequest Info
 
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CAMARILLO, Calif., July 28, 2020 — UV-Enhanced PhotodiodeThe UVG5S UV-enhanced photodiode from Opto Diode Corp. features a 5-mm2 circular active area and a welded cap with a UV glass window.

The device is ideal for detection between 225 and 400 nm, featuring <2% response degradation after exposure to 7000 J/cm2 at 254 nm. Electro-optical characteristics include responsivity at 0.09 A/W to 0.115 A/W and dark current of 1 nA. The reverse breakdown voltage ranges from 25 to 50 V, and capacitance is 500 to 1500 pF. Response time is 1 to 2 µs.

With 100% internal quantum efficiency from 200 to 365 nm, the UVG5S is ideal for laser power monitoring tasks and other high-energy detection applications.


Photonics.com
Jul 2020
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ProductsUV-Enhanced PhotodiodeOpto DiodelasersSensors & DetectorsopticsoptoelectronicsAmericas

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