UVG100 Photodiode

Opto Diode CorporationRequest Info

NEWBURY PARK, Calif., Sept. 24, 2013 — Opto Diode Corp. has introduced the UVG100 silicon photodiode for applications that require extreme stability for the detection of vacuum-UV and extreme-UV photons.

The photodetector has a 100-mm² active area and features good UV response. After exposure to megajoules/cm², it showed less than 2 percent responsivity loss. The device delivers 100 percent quantum efficiency and features high radiation hardness. A proprietary oxynitride front window protects it from humidity and other environmental conditions.

Responsivity under test conditions at 254 nm is a minimum of 0.08, typical 0.09, and maximum 0.13 A/W. The rise time at 10 V is a maximum of 10 µs. The shunt resistance at ±10 mV is a minimum of 20 MΩ, the reverse breakdown voltage is typically 10 V, and the capacitance is typically 10 nF with a maximum of 20 nF.

Visit company website

About this supplier

explore related content

Photonics.com
Sep 2013

REQUEST INFO ABOUT THIS PRODUCT

* Message:

(requirements, questions for supplier)

Your contact information

* First Name:

* Last Name:

* Email Address:

* Company:

Address:

Address 2:

City:

State/Province:

Postal Code:

* Country:

Phone #:

Fax #:

Register or login to auto-populate this form:

Login Register

* Required

When you click "Send Request", we will record and send your personal contact information to Opto Diode Corporation by email so they may respond directly. You also agree that Photonics Media may contact you with information related to this inquiry, and that you have read and accept our Privacy Policy and Terms and Conditions of Use.

Browse Cameras & Imaging, Lasers, Optical Components, Test & Measurement, and more.

Menu

Search

UVG100 Photodiode