Femtosecond Laser Promotes Rapid, Localized Nanowire Growth
Nov 1, 2006 — Optoelectronic devices, including blue laser diodes, LEDs and photodetectors, rely on the wide bandgap (2.8 eV) of semiconductor ZnSe nanowires. Because the fundamental optical and electronic properties of these nanowires depend on size, several growth techniques exist to generate them with controlled dimensions.
A team of researchers from the University of Tokyo, from Zhongshan University in Guangzhou, China, and from the Chinese Academy of Sciences in Shanghai have applied pulsed laser...