Silicon Precursors
MORRISVILLE, Pa., July 30, 2019 — Silicon source precursors for silicon nitride (SiN) ultrathin film deposition in semiconductor applications have been announced by Gelest Inc.
SiN precursors are useful for a variety of deposition processes, especially those requiring a low thermal budget. The precursors are designed with a combination of physical properties, thermal stability, and chemical reactivity to meet the needs of chemical vapor deposition, plasma enhanced CVD, atomic layer deposition, and liquid phase deposition....
Gelest Inc.