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Silicon Avalanche Photodiodes Products
Silicon Avalanche Photodiodes
LATHAM, N.Y., Aug. 23, 2018 — Marktech Optoelectronics has announced standard and custom silicon avalanche photodiodes (Si APDs) in quantities from prototype to OEM volumes. The APDs offer low-level light and short pulse detections of wavelengths between 400 and 1100 nm. They are offered with choice of either a 230- or 500-µm active diameter; optical sensitivity optimizations for 800- or 905-nm peak response; an internal gain mechanism; high gain at low bias voltage; extremely fast rise times as low as 300 ps;...
Marktech Optoelectronics Inc.
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Silicon Avalanche Photodiodes
LATHAM, N.Y., June 5, 2015 — Marktech Optoelectronics has announced a new line of silicon avalanche photodiodes (APDs) with an internal gain mechanism, fast time response, low dark current and high sensitivity in the near-infrared region. The devices are the preferred...
Marktech Optoelectronics Inc.
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Series 8r Silicon APD
WESTLAKE VILLAGE, Calif., June 6, 2014 — The Series 8r silicon avalanche photodiodes (APD) from First Sensor Inc. offers high sensitivity in the red and green wavelength range. They feature a flat gain curve where the internal amplification rises slowly with the applied reverse bias...
First Sensor Inc.
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800-nm Silicon Avalanche Photodiodes
HAWTHORNE, Calif., Oct. 15, 2012 — OSI OptoElectronics Inc. has introduced the APD Series 8-150, a line of silicon avalanche photodiodes optimized for operation in the 800-nm wavelength region. Available in hermetically sealed metal packages, the devices offer low noise and...
OSI Optoelectronics Inc.
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Silicon Avalanche Photodiodes
Sep 1, 2011 — Hamamatsu Corp. has launched silicon avalanche photodiodes for 800-nm measurements. The S10341 series devices offer high sensitivity at 800 nm, making them suitable for use in optical rangefinders, laser radar and free-space optics. They exhibit a...
Hamamatsu Corporation
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S10341 Si Avalanche Photodiodes
BRIDGEWATER, N.J., July 25, 2011 — Hamamatsu Corp. has launched a line of silicon (Si) avalanche photodiodes for 800-nm measurements. The S10341 series devices offer high sensitivity at 800 nm, making them suitable for use in optical rangefinders, laser radar and free-space...
Hamamatsu Corporation
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Pulsed Laser Diodes and Silicon APDs
Mar 7, 2007 — Laser Components IG said its silicon avalanche photodiodes (APDs) complement its pulsed laser diodes (PLDs) at 850 and 905 nm. Both are produced in-house. The company said it offers transmitter/receiver combination of the PLDs and APDs.
Laser Components USA Inc.
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The Perfect Avalanche
Apr 6, 2006 — Laser Components DG Inc. has manufactured silicon avalanche photodiodes (APDs) in Phoenix, Ariz., since 2004. The detectors are based on a semiconductor structure developed by the company. Its standard program includes epitaxy and reach-through...
Laser Components Canada Inc.
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PHOTON DETECTION IN THE VISIBLE
Jan 1, 2005 — The SPDM-VIS family from id Quantique SA has been expanded to include the id100 and id150 compact single-photon-detection modules. Timing resolution is 40 ps, and detection efficiency is up to 40% over a wide spectral range. Dead time is 70 ns, and...
ID Quantique
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(9 results found)
May 2024
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