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molecular beam epitaxy News
News Briefs
Dec 20, 2005 — Riber, a French maker of molecular beam epitaxy (MBE) machines, said it has received an order for an MBE 6000 to be delivered and invoiced before the end of this year. MBE machines enable the manufacture of compound semiconductor materials that are...
Daily News Briefs
Jun 7, 2005 — Cree Inc. has granted a license to Cotco International, a Hong Kong-based developer of LED products, to manufacture white LEDs under US Patent No. 6,600,175, involving its InGaN nitride LED and phosphor conversion technology. Cotco is one of the...
Daily News Briefs
May 18, 2005 — Essex Corp., a designer of optical components used by the US military and intelligence agencies, announced it has moved its corporate headquarters to 6708 Alexander Bell Drive, Columbia, Md. The new building includes expanded office and laboratory...
Growth Technique Yields P-Type ZnO
May 1, 2005 — A multi-institution research effort in Japan has resulted in the production of P-type ZnO using a variant of molecular beam epitaxy that the participants suggest may find application in blue-violet LEDs and laser diodes. In the technique, the...
Daily News Briefs
Mar 21, 2005 — Riber SA announced it will combine its two production facilities, in Rueil-Malmaison, France, into a nearby site it is in the process of purchasing. Riber makes molecular beam epitaxy (MBE) machines used in the manufacture of compound semiconductor...
InGaN Laser Diodes Grown by Molecular Beam Epitaxy
Mar 1, 2005 — Despite its potential advantages over metallorganic chemical vapor deposition, molecular beam epitaxy has until recently been considered unsuitable for the production of InGaN-based emitters such as blue-violet laser diodes for next-generation...
Daily News Briefs
Jul 23, 2004 — Newport Corp. has announced a new series of travel awards totaling $10,000 for students presenting papers at the two largest meetings of The International Society for Optical Engineering (SPIE). These Newport Research Excellence awards are open to...
InGaN Laser Diodes Are Grown by Molecular Beam Epitaxy
Apr 1, 2004 — Researchers at Sharp Laboratories of Europe Ltd. in Oxford, UK, have reported the successful fabrication of blue-violet InGaN laser diodes using molecular beam epitaxy. Currently, these emitters are grown using metallorganic chemical vapor...
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May 2024
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