InGaAs PIN Photodiode

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Thursday, October 5, 2023
Chunghwa Leading Photonics Tech Co. Ltd.

PIN Photodiode Wavelength Range: 0.9 - 1.7 µm, 0.6 - 1.7 µm, 1.1 - 1.9 µm, 1.2 - 2.2 µm. Package Type: Chip ( Die ), CLCC, TO-Can, TO-Can with 1 Stage Cooler. Customized Aperture sizes are also available. Based on the skilled InGaAs processing, we are able to provide a series of high-quality, large-area InGaAs PIN photodiode chips with apertures of 0.3, 0.5, 1, 2, 3, and 5 mm. The short wavelength extended (600 ~ 1700 nm, -17V) series can cover the light detection waveband in the combination of Si and standard InGaAs detectors. We also launched an extended wavelength range of 0.9 - 1.9 µm, 0.9 - 2.2 µm, and 0.9 – 2.6 µm for applications as spectroscopy and distance detection. In response to the growing demand for low-light sensing (e.g., LiDAR), CLPT has launched thermoelectric-cooled InGaAs photodiodes based on a compact TO-46 package. With minimal cooling power consumption(<0.3 W) for low-temperature or temperature-controlled operation, these photodiodes exhibit better sensitivity and stability than conventional uncooled ones. Avalanche PIN Photodiode - Our InGaAs APDs provide high near-infrared sensitivity for low-light detection at high speeds. A high reliable planar device with high responsivity in 0.95 - 1.65 µm. Low leakage current and noise and = 800 MHz 3 dB bandwidth. CLCC and thermoelectric cooler packages are available. For applications as Light detection and ranging (LiDAR), Optical Coherence Tomography (OCT), and fiber optic communication and testing. For more information and Data Sheet, you may reach us by website at or by email at [email protected].

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