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Oxford Applied Research Introduces RF Atom Sources With Beam Shaping
Sep 2001
OXFORDSHIRE, Sept. 21 -- Oxford Applied Research (OAR) introduces a new range of RF Atom Sources for zero-damage oxide and nitride film growth over large areas. The new design encompasses beam shaping of the atomic flux to permit high uniformity to be achieved over up to 12" diameter substrate platens. OAR sources have been employed with great success in applications such as GaInNAs, GaN, ZnO, ultra-thin Al2O3 and deposition of high-k dielectric oxide layers. For more information visit

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