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AIXTRON, Yale to Research GaN Technology
Feb 2002
AACHEN, Germany & NEW HAVEN, Conn., Feb. 28 -- Semiconductor epitaxial equipment supplier AIXTRON AG announced it has received a contract from Yale University for an AIX 200/4 RF-S MOCVD system, and for joint cooperation in the research and development of GaN technology for novel devices and structures for opto-electronic applications based on AIXTRON's HeteroWafer technology.

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