Close

Search

Search Menu
Photonics Media Photonics Buyers' Guide Photonics EDU Photonics Spectra BioPhotonics EuroPhotonics Industrial Photonics Photonics Showcase Photonics ProdSpec Photonics Handbook
More News
share
Email Facebook Twitter Google+ LinkedIn Comments

Lasers Grown from Solid Arsenic

Photonics Spectra
Aug 2002
Using gas-source molecular-beam epitaxy and a solid arsenic source, a team from Princeton University in New Jersey has constructed a 1.3-µm InGaAsN quantum-well laser with a characteristic temperature of 122 K and quantum efficiency of 82 percent. The same method also produced a 1.4-µm version with a characteristic temperature of 100 K and a quantum efficiency of 52 percent. As described in the May issue of IEEE Photonics Technology Letters, growing the laser from a solid arsenic source improves performance by reducing the formation of N-H complexes, thus diminishing the nonradiative centers in the quantum well.

Research & TechnologyTech Pulselasers

Comments
Terms & Conditions Privacy Policy About Us Contact Us
back to top

Facebook Twitter Instagram LinkedIn YouTube RSS
©2018 Photonics Media, 100 West St., Pittsfield, MA, 01201 USA, info@photonics.com
x Subscribe to Photonics Spectra magazine - FREE!
We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.