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AIXTRON and RPI Conducting GaN Research

Photonics.com
May 2003
AACHEN, Germany, and Troy, N.Y., May 27 -- Rensselaer Polytechnic Institute (RPI) and AIXTRON, a German supplier of equipment for semiconductor epitaxy, are conducting a joint research project in the field of GaN ultrahigh-brightness LEDs for a spectral range of green to deep ultraviolet. They will also study the use of AlGaN with a high aluminium content for electronic device manufacture.

RPI has purchased an AIX 200/4 RF-S MOCVD system from AIXTRON. The collaboration is part of RPI's Future Chips Constellation, a research program specializing in technologies based on compound semiconductors, including 3-D chip architectures and optical, microwave, terahertz and plasma wave communications.

E. Fred Schubert, a pioneering semiconductor researcher and professor of electrical and computer engineering at Boston University and head of the Future Chips Constellation, said, "We have chosen the state-of-the-art AIX 200/4 RF-S due to AIXTRON’s highly successful history and continuing advancement in GaN MOCVD research and development. We can move forward confidently and efficiently in our GaN material studies knowing we have a reliable source of GaN thin films."

For more information, visit: www.aixtron.com


AixtronAlGaNCommunicationsGaNNews & FeaturesRensselaer Polytechnic InstituteRPI

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