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Quantum-Dot Photodetector Takes the Heat

Photonics Spectra
Jun 2003
A quantum-dot IR photodetector with detection ability from 6.7 to 11.5 µm that can operate at temperatures of up to 260 K was demonstrated by researchers at the University of Florida in Gainesville and at National Central University in Chung-Li, Taiwan. The InGaAs/GaAs detector has peak detection wavelength shifts from 7.6 to 8.4 µm when the temperature rises from 40 to 260 K.

The detector can handle such high temperatures because of its very low dark current and long carrier lifetime in the quantum dots. Other groups have demonstrated high-temperature quantum-dot detectors, but this one is unique because it doesn't use a large bandgap current blocking barrier such as AlGaAs or InGaP.

InGaAs/GaAs detectorNational Central Universityquantum-dot IR photodetectorResearch & TechnologySensors & DetectorsTech PulseUniversity of Florida

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