Semiconductor Laser International Corp., based in Binghamton, N.Y., has unveiled a high-power semiconductor diode laser (808 nm) with a conversion efficiency of 56 percent at room temperature. Officials presented their findings at the 11th annual Diode Laser Technology Review Conference held in Albuquerque, N.M.
To achieve this level of efficiency, engineers optimized the structure of the diode and improved the quality of crystal growth. The company's diodes have potential uses in the automotive, dental, medical, telecommunications and optical data storage fields.