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SemiConductor Devices Receives $1.75 Million Contract

Photonics Spectra
Oct 2008
DARPA has awarded a Phase I contract worth $1.75 million to SemiConductor Devices of Haifa, Israel, for the development of an “XBn” infrared detector technology. The technology will consist of a semiconductor heterostructure detector that will enable operating temperatures of around 150 K without performance degradation.

Businessinfrared detector technologylight speedperformance degradationsemiconductor heterostructure detectorSensors & Detectors

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