Close

Search

Search Menu
Photonics Media Photonics Buyers' Guide Photonics EDU Photonics Spectra BioPhotonics EuroPhotonics Industrial Photonics Photonics Showcase Photonics ProdSpec Photonics Handbook
More News
share
Email Facebook Twitter Google+ LinkedIn Comments

Aluminum-Free Diodes Offer Doubled Power Potential

Photonics Spectra
Apr 1997
Researchers at the University of Wisconsin-Madison and Coherent Inc. have produced diode lasers with aluminum-free active areas, which they expect will operate more reliably than AlGaAs-active diodes and will provide roughly twice the power. Writing in Applied Physics Letters, the researchers say they developed an 830-nm InGaAsP/GaAs device that operates at 2.35 W per facet (4.7 W for both facets), with power limited by catastrophic optical mirror damage. Carrier leakage in previous InGaAsP/GaAs-active diodes has caused high threshold current requirements and low efficiency. The recent success, according to the paper, came after adding 0.1-µm electron-blocking layers and altering the cladding material.

diode lasersResearch & TechnologyTech Pulselasers

Comments
Terms & Conditions Privacy Policy About Us Contact Us
back to top

Facebook Twitter Instagram LinkedIn YouTube RSS
©2018 Photonics Media, 100 West St., Pittsfield, MA, 01201 USA, info@photonics.com
x Subscribe to Photonics Spectra magazine - FREE!
We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.