Search Menu
Photonics Media Photonics Buyers' Guide Photonics EDU Photonics Spectra BioPhotonics EuroPhotonics Industrial Photonics Photonics Showcase Photonics ProdSpec Photonics Handbook
More News
Email Facebook Twitter Google+ LinkedIn Comments

Interlayers Ease Mismatch Stress

Photonics Spectra
Aug 2001
Efficient infrared and red vertical-cavity surface-emitting lasers will require high-quality AlGaN/GaN distributed Bragg reflectors, but the lattice mismatch between GaN and AlN leads to the formation of cracks. Now a research team from Sandia National Laboratories in Albuquerque, N.M., and Brown University in Providence, R.I., has demonstrated that inserting AlN interlayers during the growth process reduces mismatch stress.

The researchers deposited 150-Å-thick layers of AlN during the growth of 2-in. wafers of distributed Bragg reflectors. Tests suggest that the interlayers convert tensile stress into compression, doubling the critical thickness for cracking. They reported the results in the May 21 issue of Applied Physics Letters.

Research & TechnologyTech Pulselasers

Terms & Conditions Privacy Policy About Us Contact Us
back to top
Facebook Twitter Instagram LinkedIn YouTube RSS
©2019 Photonics Media, 100 West St., Pittsfield, MA, 01201 USA,

Photonics Media, Laurin Publishing
x Subscribe to Photonics Spectra magazine - FREE!
We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.