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Perkins Precision Developments - Plate Polarizers LB 4/24

AlGaN Displays Efficient UV Emission

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A Japanese research team from Riken in Saitama, Waseda University in Tokyo and Tokyo Institute of Technology in Yokohama reported in the Jan. 7 issue of Applied Physics Letters that it has achieved 230- to 280-nm emission from AlGaN-based quantum wells, with efficiencies at 77 K as high as those of InGaN-based quantum wells. The researchers grew the multiple-quantum-well structures on a SiC substrate using metallorganic vapor phase epitaxy. A xenon lamp producing 215- or 227-nm radiation and a 257-nm argon-ion laser served as the excitation sources for the samples. They suggest that...Read full article

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    Published: March 2002
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