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Laser Deposits High-k Silicate Films

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Daniel S. Burgess

Researchers at Université du Quebec in Varennes, Canada, hope to enable semiconductor manufacturers to continue reducing the size of integrated circuits. The laser-deposited films of titanium silicate created by the team suggest that an answer to the gate electrode problem may not be too far off. Dilip K. Sarkar, a member of the team who is now at the University of Waterloo in Ontario, explained that the current International Technology Roadmap for Semiconductors projects that the dielectric layer at the gate electrode will be only 1 nm thick in 2012. The silicon dioxide used today...Read full article

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    Published: May 2002
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