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Hamamatsu Corp. - Earth Innovations LB 2/24

Quantum-Dot Infrared Detector Displays Multispectral Operation

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In the Nov. 1 issue of Applied Physics Letters, engineers at Stanford University in California report the development of a two-color InGaAs quantum-dot infrared photodetector that operates at 5.5 and 9.2 µm at 77 K. Potential applications of the device include temperature sensing, chemical analysis and target discrimination. The detector comprises 10 layers of N-doped InGaAs quantum dots in an InGaP matrix, sandwiched between GaInP barrier layers and GaAs. The quantum dots display an average radius of 20 nm and an areal density of 3 × 1010/cm2. The researchers fabricated the device by...Read full article

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    Published: December 2004
    As We Go To PressBreaking Newschemical analysisInGaAs quantum-dot infrared photodetectorPresstime BulletinSensors & DetectorsStanford Universitytarget discriminationtemperature sensing

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