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Growth Technique Yields P-Type ZnO

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Daniel S. Burgess

A multi-institution research effort in Japan has resulted in the production of P-type ZnO using a variant of molecular beam epitaxy that the participants suggest may find application in blue-violet LEDs and laser diodes. In the technique, the temperature in the growth process is rapidly modulated to enable high crystallinity and high concentrations of the nitrogen dopant. Despite its advantages as a material for short-wavelength emitters, including its room-temperature bandgap of 3.37 eV and an exciton binding energy of 60 meV, ZnO has tended to resist P-type doping. It remains a matter of...Read full article

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    Published: May 2005
    crystallinityFeaturesmolecular beam epitaxyshort-wavelength emitters

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