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Freescale Creates GaAs MOSFET Device

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AUSTIN, Texas, Feb. 3, 2006 -- Freescale Semiconductor has developed what it says is the first device to combine gallium arsenide (GaAs) semiconductor compound performance with the benefits of traditional metal oxide semiconductor field effect transistor (MOSFET) technology and scaling laws. Freescale's said device enables the development of new classes of power amplifier and low-power, ultrafast semiconductors that significantly shrink the size and boost the performance of end devices. "The performance improvements could fundamentally change analog-to-digital conversion technology,...Read full article

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    Published: February 2006
    Freescale SemiconductorGaAsgallium arsenideindustrialmetal oxide semiconductor field effect transistorMOSFETNews & Features

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