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Osram Develops First GaN-Based LEDs on Silicon

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SUNNYVALE, Calif., Jan. 18, 2012 — To replace the sapphire substrates commonly used in the LED industry, researchers at Osram Opto Semiconductors have manufactured the first high-performance blue and white LED prototypes in which gallium-nitride layers are grown on 6-in. silicon wafers. The new chips, which are already in the pilot stage, are being tested under practical conditions. Osram said they could be commercially available in about two years. This diagram shows the production of a UX:3 chip on a silicon wafer. (Images: Osram) Silicon is an attractive, low-cost option for large-volume fabrication. Quality...Read full article

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    Published: January 2012
    AmericasBusinessCaliforniaConsumerEuropegallium-nitride layers on silicon wafersGaN LEDs on silicon wafersGaNonSi projectGerman Federal Ministry of Education and ResearchGolden Dragon PlusindustrialLED chipsLED silicon chipsLight Sourceslight-emitting diodesOsram Opto SemiconductorsPeter Stausssapphire-based chipsSensors & Detectorssilicon wafersUX:3white LEDsLEDs

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