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Hamamatsu Corp. - Earth Innovations LB 2/24

Release Process Could Broaden Uses of GaN SCs

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TOKYO, April 18, 2012 — Nitride semiconductors grow only on certain surfaces, and their utility is limited by the substrate on which they are fabricated. But a new release process not only makes the method cheaper and easier, but also expands the potential uses of the materials. Yasuyuki Kobayashi and colleagues at Nippon Telegraph and Telephone Corp. (NTT) demonstrated the process using a technique called mechanical transfer using a release layer (MeTRe). They grew a very thin hexagonal layer of boron nitride (h-BN) between a sapphire substrate and a gallium nitride (GaN)-based semiconductor. Sandwiched in...Read full article

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    Published: April 2012
    Glossary
    gallium nitride
    Gallium nitride (GaN) is a compound made up of gallium (Ga) and nitrogen (N). It is a wide-bandgap semiconductor material that exhibits unique electrical and optical properties. Gallium nitride is widely used in the production of various electronic and optoelectronic devices, including light-emitting diodes (LEDs), laser diodes, power electronics, and high-frequency communication devices. Key points about gallium nitride (GaN): Chemical composition: Gallium nitride is a binary compound...
    metallorganic chemical vapor deposition
    A method of growing single crystals in which atoms and molecules from gaseous organic compounds interact and form a layer on a single-crystal substrate.
    Al1-xGaxNAsia-Pacificboron nitrideenergygallium nitrideGaNgreen photonicsh-BNJapanLight SourcesMechanical Transfer using a Release layermetallorganic chemical vapor depositionMeTReMOCVDNippon Telegraph and TelephoneNTTrelease layerResearch & Technologysapphire substratesemiconductor fabricationsemiconductorsTokyoYasuyuki KobayashiLEDs

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