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Imec, Veeco Team on GaN-on-Si Devices

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LOUVAIN, Belgium, and PLAINVIEW, N.Y., Sept. 3, 2013 — Nanoelectronics research center imec of Belgium and chip processing equipment maker Veeco Instruments Inc. are collaborating to lower the cost of producing gallium-nitride-on-silicon (GaN-on-Si)-based power devices and LEDs. Veeco's metallorganic chemical vapor deposition (MOCVD) equipment is being used at imec to meet the center's development milestones for GaN-on-Si for power and LED applications. "Our goal is to establish an entire manufacturing infrastructure that allows GaN-on-Si to be a competitive technology,” said imec chief scientist Barun Dutta. "This...Read full article

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    Published: September 2013
    Glossary
    gallium nitride
    Gallium nitride (GaN) is a compound made up of gallium (Ga) and nitrogen (N). It is a wide-bandgap semiconductor material that exhibits unique electrical and optical properties. Gallium nitride is widely used in the production of various electronic and optoelectronic devices, including light-emitting diodes (LEDs), laser diodes, power electronics, and high-frequency communication devices. Key points about gallium nitride (GaN): Chemical composition: Gallium nitride is a binary compound...
    power
    With respect to a lens, the reciprocal of its focal length. The term power, as applied to a telescope or microscope, often is used as an abbreviation for magnifying power.
    AmericasBarun DuttaBelgiumBusinessConsumerenergyEuropegallium nitrideGaN-on-Sigreen photonicsIMECindustrialJim JensonLight SourcesMaterials & ChemicalsMOCVDNew Yorkpowersiliconsolid-state lightingVeecoLEDs

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