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850-nm Semiconductor Laser Diode
May 2007
Laser Components USA Inc.Request Info
HUDSON, N.H., May 29, 2007 -- Laser Components IG Inc. said it has expanded its product range in the near-infrared spectrum with the release of the ADL85501TL, an 850-nm continuous-wave semiconductor laser diode.

In addition to the common wavelengths in the visible spectrum, Laser Components offers what it said is a reasonably-priced 850-nm semiconductor laser diode with 50 mW of output power.

  • Low power consumption (typically 75 mA)
  • Operating temperature range: -10 to +50 °C
  • Industry-standard 5.6-mm housing
  • Monitor diode included for power controlling
With a short rise time of < 1 ns, the ADL85501TL is best suited for fast sensor applications, security scanners, data transmission, and the illumination of night-vision instruments, the company said.

For more information, visit:; e-mail:

Laser Components IG Inc.
9 River Rd.
Hudson, NH 03051
Phone: (603) 821-7040
Fax: (603) 821-7041


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ADL85501TLdefenseLaser ComponentsLaser Components IGlaser diodesnear-infrarednight-visionNIRphotonicsProductssemiconductorSensors & Detectors

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