Silicon Avalanche Photodiodes
Hamamatsu CorporationRequest Info
Hamamatsu Corp. has launched silicon avalanche photodiodes for
800-nm measurements. The S10341 series devices offer high sensitivity at 800 nm,
making them suitable for use in optical rangefinders, laser radar and free-space
optics. They exhibit a quantum efficiency of 75% at 800 nm and are sensitive between
400 and 1000 nm. Features include low noise, high-speed response and stable operation
at low bias. The package measures 1.8 x 3.1 x 1 mm. The S10341-02’s photosensitive
area has a 0.2-mm diameter. At 100x gain, it has a typical cutoff frequency of 1000
MHz and 50-pA dark current. The S10341-05 has a photosensitive area measuring 0.5
mm in diameter. Its typical cutoff frequency and dark current are 900 MHz and 100
pA, respectively, at 1003 gain.
https://www.hamamatsu.com
/Buyers_Guide/Hamamatsu_Corporation/c5841
Published: September 2011
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