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OD-110W High-Power IR Emitters

Photonics.com
May 2012
Opto Diode CorporationRequest Info
 
NEWBURY PARK, Calif., May 14, 2012 — Opto Diode Corp. has introduced the OD-110W, the second product in the superhigh-power series of gallium aluminum arsenide infrared emitters. Featuring a very uniform optical beam, the device is designed for military imaging applications.

It features four wire bonds on die corners and a hermetically sealed three-lead standard TO-39 package, with all surfaces gold-plated for added durability. Typical total power output is 140 mW (minimum 80 mW), with a peak emission wavelength at 850 nm.

Power dissipation is 1000 mW at absolute maximum ratings of 25 °C (case) and a continuous forward current of 500 mA. The peak forward current is 1.5 A, and the reverse voltage is 5 V. The lead soldering temperature is at 260 °C, making the IR emitter reliably operational in extreme temperatures, from −40 to 100 °C.

The OD-110W is suitable for systems using night vision imaging technology, such as goggles and/or cameras, or for integration into markers and illuminators.


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AmericasCaliforniacamerasdefensegallium aluminum arsenide IR emitterimaginginfrared emitterIR emitter gold-plated surfacesIR emitter night vision camerasIR emitter night vision gogglesIR emitter TO-39IR emitter uniform optical beamlight sourcesmilitary imagingOD-110WOpto DiodeProducts

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