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Photonics Spectra
May 2013
Renesas Electronics Europe Ltd.Request Info
DÜSSELDORF, Germany, March 20, 2013 — Semiconductor solutions provider Renesas Electronics Europe has announced two photocouplers with high-speed switching operation and an integrated insulated-gate bipolar transistor (IGBT) protection function for applications including industrial machinery and solar power systems.

The PS9332L and PS9332L2 feature an on-chip integrated active Miller clamp circuit to prevent IGBT malfunction, 20 percent faster switching speed, a compact 8-pin SDIP (shrink dual-inline package) and high-temperature (125 °C) operation. The devices also can be used for gate drive of IGBT devices in inverter circuits for motor control.

The photocouplers comprise a gallium aluminum arsenide (GaAlAs) LED and a photodetector IC. They use a proprietary BiCMOS process that results in low parasitic capacitance, shorter delay time and low current consumption.

The PS9332L offers 7-mm outer creepage and the PS9332L2, 8 mm.

Samples of the devices are available now, and mass production will begin in June.

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7 mm outer creepage8 mm outer creepageBiCMOSenergyEuropeGaAlAsGermanyIGBTindustrialindustrial machinery systemintegrated insulated-gate bipolar transistorNew ProductsphotocouplersProductsPS9332LPS9332L2RenesasSDIPsemiconductor solutionsSensors & Detectorsshrink dual inline packagesolar power systemTest & Measurement

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