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NSX 320 Metrology System

Photonics.com
Aug 2013
Rudolph Technologies Inc.Request Info
 
FLANDERS, N.J., Aug. 7, 2013 — Rudolph Technologies Inc. has released three application-specific configurations of its NSX 320 automated macro-defect inspection system for wafer-level packaging, 2.5D interposers and 3DICs (3-D integrated circuits) using through-silicon via as interconnects.

The system measures film thickness (polymers, photoresist, glass), thin remaining silicon thickness, surface topography, and copper pillar and solder bump height. The advanced wafer-level packaging configuration adds measurements of the wafer profile (warp and bow), total stack thickness and thick/thin remaining silicon thickness (bonded wafer before and after grind).

The 3DIC configuration measures all of the above plus via and trench depth, bonded wafer total thickness variation, and adhesive layers.  


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2.5D3DICsadhesive layersAmericasautomated macro-defect inspection systemcopper pillar heightfilm thicknessglassICsintegrated circuitsinterconnectsinterposermachine visionNew JerseyNSX 320photoresistpolymersProductsremaining silicon thicknessRudolph Technologiessolder bump heightsurface topographyTest & Measurementthrough silicon viatrench depthvia depthwafer level packaging

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