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Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor

Photonics.com
Mar 2018
Microsemi Corp.Request Info
 
ALISO VIEJO, Calif., March 27, 2018 — The 40 mOhm MSC040SMA120B next-generation 1200-V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) from Microsemi Corp. is a SiC solution designed for power applications in rugged environments.

The SiC MOSFET product family is avalanche rated, demonstrating the devices' ruggedness for industrial, automotive and commercial aviation power applications with high short-circuit withstand rating for robust operation. SiC MOSFETs and new SiC Schottky-barrier diodes are designed with high repetitive unclamped inductive switching (UIS) capability at rated current with no degradation or failures.

The SiC MOSFETs maintain high UIS capability at approximately 10 to 15 J/cm2 and robust short circuit protection at 3 to 5 μs.


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ProductsSilicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor40 mOhm MSC040SMA120BmaterialsMOSFETMicrosemisemiconductorsopticsAmericas

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