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High-Power IR Emitters

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Opto Diode Corporation
Opto Diode Corp. has announced the OD-110L, the first in a series of superhigh-power gallium aluminum arsenide (GaAlAs) infrared emitters. The devices feature ultrahigh optical output with a very narrow optical beam, making them suitable for night vision and other military imaging applications. They are housed in a standard three-lead hermetically sealed TO-39 package to accommodate the small-size (0.6604 × 0.6604 mm) chip. There are four wire bonds on die corners, and all surfaces are gold-plated for durability. Typical total power output at 25 °C is 110 mW, and minimum...See full product

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