Request InfoGT Advanced Technologies, Advanced Materials GroupGT Advanced Technologies HEM® Ti:sapphire crystals are grown using the Heat Exchanger Method (HEM®). This unique method of growth allows for production of the world’s largest HEM® Ti:sapphire crystals, with excellent wavefronts enabling your high beam quality. HEM® Ti:sapphire Advantage • Excellent crystal homogeneity • No bubbles or light scatter • Highest figure of merit • Up to 200-mm amplifier crystals • Trusted laser damage threshold • Brewster’s angle and custom configurationsSee full productRelated content from Photonics MediaPRODUCTSPhotonics Spectra January 2023 IssueLaser Cutting HeadsThe BIMO-FSC3 line of laser cutting heads from Coherent Corp. features high-power ratings for materials processing. 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