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Cree Licenses Patent on Pendeoepitaxy Process

Photonics.com
Aug 2001
DURHAM, N.C., Aug. 8 -- Cree Inc. said that it had licensed from North Carolina University a patent entitled "Methods of Fabricating Gallium Nitride (GaN) semiconductor Layers by Lateral Growth from Sidewalls into Trenches, and Gallium Nitride Semiconductor Structures Fabricated Thereby." The patent covers process technology known as pendeoepitaxy, or pendeo for short, which refers to a process for growing gallium nitride semiconductor layers with low defect densities.

Chuck Swoboda, Cree's president and CEO said, "The issuance of this patent significantly extends Cree's portfolio of technology critical in the development of high-performance GaN-based devices. Growing low defect layers of GaN is essential to the realization of long-lifetime GaN-based laser diodes and other high-performance devices. We believe this patent strengthens our intellectual property position immensely, since it covers use of the patented process on any substrate."



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