DURHAM, N.C., Dec. 24 -- Cree Inc. announced it has developed a new class of gallium nitride (GaN) power transistors that produce a continuous wave (CW) power density of 32 W/mm and 55 percent power added efficiency (PAE) at 4 GHz. Cree said these same devices produced a CW power density of 30 W/mm and 50 percent PAE at a higher frequency of 8 GHz. Cree said it has demonstrated GaN high-electron mobility transistor (HEMT) power transistors with almost three times the power density and five points higher PAE than previously demonstrated in the industry. The improvements were developed in...Read full articleRelated content from Photonics MediaArticlesBluGlass Names its Company President Haden as CEOSemiconductor technology company BluGlass Ltd. has appointed company president Jim Haden to the position of CEO. Haden joined the company in September 2021. 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Usually...Aluminum-Free Diode LasersArc Lamp Power SuppliesCompaniesFrankfurt Laser CompanyFrankfurt Laser Company (FLC) is a world-leading supplier of Fabry-Perot (FP), distributed feedback (DFB) and distributed Bragg reflector (DBR) laser diodes, SM individually addressable and...Photonics Buyers' GuideAerotech Inc.As a provider of precision automation and motion control systems, Aerotech offers a complete range of motion and automation solutions to our clients. Our standard product offerings include: ...Photonics Buyers' GuidePower Technology Inc.At Power Technology, Inc., we have been a driving force in the laser industry for over fifty years. Since 1969, we have been designing, developing, and manufacturing a comprehensive range of laser...Photonics Buyers' GuideRPMC Lasers Inc.RPMC Lasers Inc is a leading laser distributor in North America. We offer only diode lasers, laser modules, diode and lamp-pumped lasers, and fiber lasers (no systems). 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