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American Xtal Expanding GaAs Substrate Capacity

Photonics.com
May 2000
FREMONT, Calif., May 9 -- American Xtal Technology Inc. (AXT) predicted it will nearly triple its gallium arsenide (GaAs) substrate production capacity by the close of next year's third quarter. According to AXT the bulk of the expansion will take place at its facility in Beijing, China.
The company has already purchased a 36,000-sq-ft building next to its current 62,000-sq-ft facility in Beijing. AXT plans to add another 160,000 sq feet by the end of the third quarter of 2001.
AXT also plans to tack on an additional 20,000 sq ft to its main facility in Fremont Calif., where it produces gallium arsenide, indium phosphide, germanium and gallium nitride substrates for a variety of communications and consumer applications.


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