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< Sensing & Detection
< Sensors & Detectors
Photodiodes
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Area
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MWIR
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27 products
Sensors & Detectors: Photodiodes
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Sensors & Detectors x
Photodiodes x
Photodiode NXIR-RF36
Opto Diode Corporation
Type:
Photodiodes
Active Area:
5 mm²
Responsivity @1064 nm:
0.38 A/W
Responsivity @850 nm:
0.65 A/W
Photodiode NXIR-RF100C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area:
1 mm²
Responsivity @1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
Photodiode ODD-900-001
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
mm2
Operating Spectral Range:
730 nm - 1100 nm
Peak Sensitivity:
940 nm
Photodiode ODD-900-002
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
8 mm²
Operating Spectral Range:
400 nm - 1100 nm
Peak Sensitivity:
940 nm
C30733 Series Avalanche Photodiodes
Excelitas Technologies Corp.
Type:
Photodiodes
InGaAs PIN Photodiodes
Excelitas Technologies Corp.
Type:
Photodiodes
C30902SH Series Silicon APDs
Excelitas Technologies Corp.
Type:
Photodiodes
Large, Rectangular Photodiode - AXUV300C
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
21.56
Sensor Height:
15.36
Light Spectrum:
UV,VIS,NIR,Multispectral
Breakdown Voltage:
5 V, min.; 25 V typical
Capacitance:
25 nF, typical.; 40 nF, max.
Detection:
Radiation, Electrons, Photons
Photodiode UVG5S
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Active Area (circular):
5 mm2
Capacitance:
2 nF
Dark Current, ldr:
1 nA
Photodiode UVG100
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
100
Sensor Height:
100
Light Spectrum:
UV
Active Area:
100 mm²
Quantum Efficiency:
100%
Responsivity (test conditions at 254 nm):
0.09 A/W typical
Large, Square Radiation Detector: AXUV576C
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
576.5
Sensor Height:
576.5
Light Spectrum:
XRAY,Multispectral
Large, Square Active Area:
576.5 mm x 576.5 mm
Lead-SolderingTemperature:
260 °C
Min. Reverse Breakdown:
5V
Photodiode UVG5
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
5
Sensor Height:
5
Light Spectrum:
UV
Active Area (Circular):
Ø 5 mm2 (typ.)
Capacitance:
2 nanofarads (nF)
Responsivity @254 nm:
0.115 A/W (typ.)
Photodiode UVG20S
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Active Area (circular):
24 mm2
Responsivity @ 254 nm:
0.115 A/W (typical)
Rise Time:
4 µsec
Photodiode UVG20C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Capacitance:
4 nF (Typ.) to 10 nF (Max.)
Circular Active Area (Typ.):
19 mm²
Internal Quantum Efficiency:
100%
Photodiode UVG12
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV,VIS
Circular Active Area:
13.2 mm²
Detection Wavelength Range:
193 nm - 400 nm
Quantum Efficiency:
100% in UV and Visible Regions
Photodiode - AXUV20A
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
5.5
Sensor Height:
5.5
Light Spectrum:
UV,VIS,NIR
Capacitance:
4 nF, typical.; 10 nF, max.
Circular Photodiode:
5.5 mm²
Detection:
Radiation, Electron, Photon
Photodiode - AXUV63HS1
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
9
Sensor Height:
9
Light Spectrum:
XRAY
High-Speed Circular Active Area:
9 mm²
Lead-SolderingTemperature:
260 °C
Maximum Dark Current:
100 nA
Photodiode NXIR-5C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area (circular):
5 mm²
Responsivity @ 1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
Photodiode - AXUV20HS1
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
XRAY
Electron Detection:
200 eV
Grid lines:
5 µm
High-Speed Circular Active Area:
5 mm Ø
PD4B-80-P50-2G-K
LD4B UAB
Type:
Photodiodes
Light Spectrum:
NIR,SWIR
Bandwidth:
2 GHz
Dark current:
0.01 nA
Responsivity at 1550 nm:
0.85 A/W
APD10G1
Albis Optoelectronics AG
Type:
Photodiodes
Light Spectrum:
NIR
Optical damage threshold:
up to +5 dBm
Receiver sensitivity:
–34.5 dBm
Responsivity:
10 A/W
PQS40A-L
Albis Optoelectronics AG
Type:
Photodiodes
Light Spectrum:
NIR
Bandwidth:
40 GHz
Responsivity:
0.8 A/W
Photodiodes
Hitachi High-Tech America Inc., Optical Communications
Type:
Photodiodes
Light Spectrum:
Multispectral
Mulit-Element Arrays
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Linear
Light Spectrum:
UV,VIS,NIR
UV-Enhanced:
A5V-35UV
High-Speed Silicon Photodiodes
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Area
Light Spectrum:
UV,VIS,NIR
350 to 1100:
nm
Package:
TO=46
Peak Responsivity:
0.50A/W @ 800 nm
4x4 Silicon Array Detectors
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Area
Light Spectrum:
VIS,NIR
Active Area:
1.96 mm²
Capacitance:
75
Dimensions:
1.4 x 1.4 mm
2-Color Sandwich Detectors
OSI Optoelectronics Inc.
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Operation:
Photovoltaic
Spectral Range (TEC) Silicon/InGaAs_):
400-1800 nm
Spectral Range Silicon/InGaAs:
400-1800 nm
Sensors & Detectors: Photodiodes Products
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