Zurich Instruments AG - Lock-In Amplifiers 4/24 LB

22 products

Photonics Products

Clear All Filters x InGaAs photodiodes x

FEMTO OE-300 High Speed Photoreceiver
Electro Optical Components Inc.

Type: Equipment
High Speed: 200MHz
Low Noise: As low as 76fW
Variable Gain: 10^2 to 10^8 V/A

APD CR200AH-1550-100M
CSRayzer Optical Technology Co. Ltd.

Type: Diode

LDA512P25M-17-T1
Chunghwa Leading Photonics Tech Co. Ltd.

Type: InGaAs
Max. Resolution: 0.512MP
Sensor Width: 25
Sensor Height: 250
Scan Type & Rate: Linear
kHz at Max. Res.: 22
Light Spectrum: SWIR
Operating Temperature: -20
Outputs: 2
Pixel Operability: >99%

LDA1024P12.5S-17-T1
Chunghwa Leading Photonics Tech Co. Ltd.

Type: InGaAs
Max. Resolution: 1KP
Sensor Width: 12.5
Sensor Height: 12.5
Scan Type & Rate: Linear
kHz at Max. Res.: 22
Light Spectrum: SWIR
Operating Temperature: -20
Outputs: 2
Pixel Operability: >99%

IG26- InGaAs PIN Photodiodes
Laser Components USA Inc.

Type: InGaAs
Light Spectrum: VIS,NIR,SWIR
50% Cut-Off Wavelength: ≥ 2.45 µm
Operating Temperature: -40 to +85 °C
Peak Responsitivity: 1.45 A/W

IG24- InGaAs PIN Photodiodes
Laser Components USA Inc.

Type: InGaAs
Light Spectrum: VIS,NIR,SWIR
50% Cut-Off Wavelength: ≥ 2.35 µm
Operating Temperature: -40 to +85 °C
Peak Responsitivity: 1.40 A/W

IG22- InGaAs PIN Photodiodes
Laser Components USA Inc.

Type: InGaAs
Light Spectrum: VIS,NIR,SWIR
50% Cut-Off Wavelength: ≥ 2.15 µm
Operating Temperature: -40 to +85 °C
Peak Responsitivity: 1.40 A/W

IG19- InGaAs PIN Photodiodes
Laser Components USA Inc.

Type: InGaAs
Light Spectrum: VIS,NIR,SWIR
50% Cut-Off Wavelength: ≥ 1.65 µm
Operating Temperature: -40 to +85 °C
Peak Responsitivity: 1.05 A/W

IG17- InGaAs PIN Photodiodes
Laser Components USA Inc.

Type: InGaAs
Light Spectrum: NIR,SWIR
50% Cut-Off Wavelength: ≥ 1.65 µm
Operating Temperature: -40 to +85 °C
Peak Responsitivity: 1.05 A/W

InGaAs PIN Photodiode
Chunghwa Leading Photonics Tech Co. Ltd.

Type: InGaAs
Light Spectrum: SWIR
Aperture Size: Ø 950 μm
Package Type: TO-46 / 5P
Spectral Range: 0.9 - 1.7 μm

InGaAs PIN Photodiodes
Excelitas Technologies Corp.

Type: Photodiodes

LE / LSE Series Linear Photodiode Array
Sensors Unlimited Inc.

Type: InGaAs
Max. Resolution: 1024MP
Sensor Width: 25
Sensor Height: 250
Scan Type & Rate: Linear
kHz at Max. Res.: 1.25
Light Spectrum: SWIR

LDB / LSB Series Linear Photodiode Arrays
Sensors Unlimited Inc.

Type: InGaAs
Max. Resolution: 512MP
Sensor Width: 25
Sensor Height: 250
Scan Type & Rate: Linear
kHz at Max. Res.: 5
Light Spectrum: SWIR

InGaAs Avalanche Photodiode
Chunghwa Leading Photonics Tech Co. Ltd.

Type: InGaAs
Light Spectrum: SWIR
Aperture Size: Ø 200 μm
Package Type: TO-46 / 5P
Spectral Range: 0.95 - 1.65 μm

G13393-0808W InGaAs Area Image Sensor
Hamamatsu Corporation

Type: InGaAs
Max. Resolution: 82KP
Scan Type & Rate: Area
Frames (fps) at Max. Res.: 228
Light Spectrum: NIR,SWIR
Number of Pixels: 320 x 256
Pixel Size: 20 x 20 µm
Spectral Response Range: 0.95-1.7 µm

PD4B-80-P50-2G-K
LD4B UAB

Type: Photodiodes
Light Spectrum: NIR,SWIR
Bandwidth: 2 GHz
Dark current: 0.01 nA
Responsivity at 1550 nm: 0.85 A/W

BPR Series 200M Balanced Light Detection Module
Beijing Rofea Optoelectronics Co. Ltd.

Type: InGaAs
Max. Resolution: 200MP
Light Spectrum: XRAY,UV,VIS,NIR,SWIR,MWIR,LWIR,FIR,Multispectral
3dB bandwidth: 200MHz
Material type: InGaAs/Si

Photodiode - APX 158-03-007
Advanced Photonix

Type: InGaAs
Sensor Width: 3.375
Sensor Height: 3.375
Scan Type & Rate: Linear
Light Spectrum: VIS,NIR,SWIR
Breakdown Voltage: 9 (typ.) V
Dark Current: 3 (typ.) to 04 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts): 3 kΩ

Photodiode - APX 158-02-003
Advanced Photonix

Type: InGaAs
Sensor Width: 2.25
Sensor Height: 2.25
Scan Type & Rate: Linear
Light Spectrum: VIS,NIR,SWIR
Breakdown Voltage: 9 (typ.) V
Dark Current: 2.5 (typ.) to 20 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts): 2.2 kΩ

2-Color Sandwich Detectors
OSI Optoelectronics Inc.

Type: Photodiodes
Light Spectrum: VIS,NIR
Operation: Photovoltaic
Spectral Range (TEC) Silicon/InGaAs_): 400-1800 nm
Spectral Range Silicon/InGaAs: 400-1800 nm

PDI-80-2G-K
LASERSCOM LLC

Type: InGaAs
Light Spectrum: NIR
Back Reflection: -50 dB
Cut-off Frequency: 2 GHz
Dark Current: 0.03 nA

APDI-55-3G-K
LASERSCOM LLC

Type: InGaAs
Light Spectrum: NIR
Cut-off Frequency: 3 GHz
Dark Current: 5 nA
Multiplication Coefficient: 80

Photonics Products

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