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281 products
Photonics Products
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detectors x
Photodiode UVG5S
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Active Area (circular):
5 mm2
Capacitance:
2 nF
Dark Current, ldr:
1 nA
Photodiode UVG100
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
100
Sensor Height:
100
Light Spectrum:
UV
Active Area:
100 mm²
Quantum Efficiency:
100%
Responsivity (test conditions at 254 nm):
0.09 A/W typical
BeamWatch
MKS Ophir, Light & Measurement
Type:
Camera
Wavelength Range:
980 - 1080nm
Max. Beam Diameter:
12.5mm
Compatible Sources:
CW
Interface:
GigE,Other
L2000W-PF-120
MKS Ophir, Light & Measurement
Type:
Benchtop
Max. Measurable Energy:
6000J
Beam Diameter:
120mm
Wavelength Range:
300 - 2200nm
Measure Power?:
Yes
Max. Measurable Power:
2000W
LiTaO3 Single Channel Pyroelectric Detector
Laser Components USA Inc.
Type:
Other
Light Spectrum:
UV,VIS,NIR,SWIR,MWIR,LWIR
Detector Type:
Pyroelectric
Spectral Range:
from UV to LWIR
LE / LSE Series Linear Photodiode Array
Sensors Unlimited Inc.
Type:
InGaAs
Max. Resolution:
1024MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
1.25
Light Spectrum:
SWIR
LDB / LSB Series Linear Photodiode Arrays
Sensors Unlimited Inc.
Type:
InGaAs
Max. Resolution:
512MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
5
Light Spectrum:
SWIR
Large, Square Radiation Detector: AXUV576C
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
576.5
Sensor Height:
576.5
Light Spectrum:
XRAY,Multispectral
Large, Square Active Area:
576.5 mm x 576.5 mm
Lead-SolderingTemperature:
260 °C
Min. Reverse Breakdown:
5V
Photodiode UVG5
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
5
Sensor Height:
5
Light Spectrum:
UV
Active Area (Circular):
Ø 5 mm2 (typ.)
Capacitance:
2 nanofarads (nF)
Responsivity @254 nm:
0.115 A/W (typ.)
Photodetector - SXUV100TF135B
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
100 mm²
Low Capacitance:
260 pF
Reverse Bias Voltage:
12V
Photodetector - SXUV100TF135
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
100 mm²
Low Capacitance:
260 pF
Reverse Bias Voltage:
12V
Photodiode UVG20S
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Active Area (circular):
24 mm2
Responsivity @ 254 nm:
0.115 A/W (typical)
Rise Time:
4 µsec
Photodiode UVG20C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Capacitance:
4 nF (Typ.) to 10 nF (Max.)
Circular Active Area (Typ.):
19 mm²
Internal Quantum Efficiency:
100%
Photodiode UVG12
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV,VIS
Circular Active Area:
13.2 mm²
Detection Wavelength Range:
193 nm - 400 nm
Quantum Efficiency:
100% in UV and Visible Regions
Photodiode - AXUV63HS1
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
9
Sensor Height:
9
Light Spectrum:
XRAY
High-Speed Circular Active Area:
9 mm²
Lead-SolderingTemperature:
260 °C
Maximum Dark Current:
100 nA
Photodiode NXIR-5C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area (circular):
5 mm²
Responsivity @ 1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
Photodetector - SXUV5
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Capacitance:
500 - 1500 pF
Circular Active Area:
5 mm2
Response Time:
1 - 2 nsec
InGaAs Avalanche Photodiode
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Light Spectrum:
SWIR
Aperture Size:
Ø 200 μm
Package Type:
TO-46 / 5P
Spectral Range:
0.95 - 1.65 μm
MST4323
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
10.3MP
Sensor Width:
4344
Sensor Height:
2368
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
120
Light Spectrum:
VIS
ADC Resolution:
11 bits @ LG/HG
Chroma:
RGB
Dynamic Range:
87 dB
Photodetector - AXUV100TF400
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
10 x 10 mm
Operating/Storage Temps. in ambient environments:
-10 °C to +40 °C
Operating/Storage Temps. in nitrogen or vacuum environments:
-20 °C to +80 °C
Photodetector - AXUV100TF030
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
10 x 10 mm
Operating/Storage Temps. in ambient environments:
-10 °C to +40 °C
Operating/Storage Temps. in nitrogen or vacuum environments:
-20 °C to +80 °C
Photodetector SXUV20C
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area (Circular):
20 mm²
Capacitance:
1.55 (typ.) to 3 (max.) nF
Rise Time:
2 µsec
S12101 CCD Area Image Sensor
Hamamatsu Corporation
Type:
CCD
Max. Resolution:
4MP
Scan Type & Rate:
Area
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
2048 x 2048
Pixel Size:
12 x 12 µm
Spectral Response Range:
165-1100 nm
S13255-2048-02 CCD Linear Image Sensor
Hamamatsu Corporation
Type:
CCD
Max. Resolution:
2KP
Scan Type & Rate:
Linear
kHz at Max. Res.:
10000
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
2048
Pixel Size:
14 µm x 500 µm
Spectral Response Range:
200-1100 nm
G12230-512WB InGaAs Linear Image Sensor
Hamamatsu Corporation
Type:
InGaAs
Max. Resolution:
0.5MP
Scan Type & Rate:
Linear
kHz at Max. Res.:
5000
Light Spectrum:
NIR,SWIR
Number of Pixels:
508
Pixel Size:
25 x 250 µm
Spectral Response Range:
0.95-2.15 µm
G13393-0808W InGaAs Area Image Sensor
Hamamatsu Corporation
Type:
InGaAs
Max. Resolution:
82KP
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
228
Light Spectrum:
NIR,SWIR
Number of Pixels:
320 x 256
Pixel Size:
20 x 20 µm
Spectral Response Range:
0.95-1.7 µm
S11963-01CR Distance Image Sensor
Hamamatsu Corporation
Type:
Other
Max. Resolution:
19KP
Scan Type & Rate:
Area
Light Spectrum:
VIS,NIR,SWIR
Max. Video Data Rate:
10 MHz
Number of Pixels:
160 x 120
Pixel Size:
30 x 30 µm
S12973-01CT Distance Image Sensor
Hamamatsu Corporation
Type:
Other
Scan Type & Rate:
Linear
kHz at Max. Res.:
5000
Light Spectrum:
VIS,NIR,SWIR
Number of Pixels:
64
Pixel Size:
22 x 50 µm
Spectral Response Range:
440-1000 nm
High Resolution Digital PIDs for VOCs
Electro Optical Components Inc.
Type:
Component
Fluo Sens Fluorescence Sensing Module
Electro Optical Components Inc.
Type:
Equipment
EOC-IRE-2000R Infrared Emitter
Electro Optical Components Inc.
Type:
Through Hole
TO Package:
TO39
High Power:
Yes
Color:
Infrared
Wavelength (nm):
2000 - 12000
Power Output:
1000mW
Forward Voltage (V):
90
Balor sCMOS
Andor Technology
Type:
sCMOS
Max. Resolution:
16.9MP
Ge MWIR Lenses
Avantier Inc.
Type:
Lenses
Lens Category:
Other
Ball Lenses
Avantier Inc.
Type:
Lenses
Diameter / Dimension:
2 - 50mm
Lens Category:
Other
Diameter Tolerance:
+/-0.05mm
Scratch & Dig:
20/10
Sphericity:
0.05mm
Ball Lenses
Shanghai Optics Inc.
Type:
Lenses
Lens Category:
Other
Diameter:
2～50mm
Diameter Tolerance:
+/-0.05mm
Scratch/Dig:
20/10
Thin-Film Coatings: Metallized Windows
Reynard Corporation
Type:
Windows
Diameter / Dimension:
5 - 600mm
Coating Type:
BBAR, Dielectric, Laser
Materials:
CaF2, MgF2, Ge, Sapphire+
Materials:
Si, ZnS, ZnSe & Zerodure
Compact Laser Modules
ProPhotonix Ltd.
Type:
Diode
Max. Power:
4mW
Wavelength:
520 - 650nm
Operating Mode:
Continuous,Pulsed
Scintillation Crystals - Stilbene
Inrad Optics Inc.
Type:
Crystals
Continuously Variable Order Sorting Filters
Delta Optical Thin Film A/S
Type:
Filters
Diameter / Dimension:
20 - 60mm
Filter Category:
Other
L-EOS™ SWIR (hyperspectral pushbroom camera)
Photon etc.
Type:
System
Aperture:
f/2.1
Pixel pitch (μm):
15, 30
Sensor operating temperature (°C):
-60, -80
Galvanometer: dynAXIS3 M
SCANLAB GmbH
Type:
1 Axis
Small Step Response (µs):
0.4
Repeatablility (µrad):
1
Overall Height (no mirror):
74mm
Weight:
300g
Nonlinearity:
<0.1%
Detachable Diode Laser - K976FANCA
BWT Ltd.
Type:
Diode
Max. Power:
30W
Wavelength:
966 - 986nm
Operating Mode:
Continuous
Beam Diam.:
200µm
Silicon (Si) material
Henan UM Optics Ltd. (Umoptics)
Type:
Blanks
Diameter / Dimension:
3 - 350mm
Diameter:
3.0-350 mm
Doped:
N,P,intrinsic
Grow method:
Cz and Fz
Large, Rectangular Photodiode - AXUV300C
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
21.56
Sensor Height:
15.36
Light Spectrum:
UV,VIS,NIR,Multispectral
Breakdown Voltage:
5 V, min.; 25 V typical
Capacitance:
25 nF, typical.; 40 nF, max.
Detection:
Radiation, Electrons, Photons
Mini-Chrom Monochromator
Optometrics Corp.
Type:
Equipment
f Number:
3.9
Focal Length:
74 mm
Operating Temperature:
-20 °C to +80 °C
Photodiode - AXUV20A
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
5.5
Sensor Height:
5.5
Light Spectrum:
UV,VIS,NIR
Capacitance:
4 nF, typical.; 10 nF, max.
Circular Photodiode:
5.5 mm²
Detection:
Radiation, Electron, Photon
Photodiode - AXUV20HS1
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
XRAY
Electron Detection:
200 eV
Grid lines:
5 µm
High-Speed Circular Active Area:
5 mm Ø
ProIR Filters
Materion Balzers Optics
Type:
Filters
Filter Category:
IR Filter
Color Filters
Lambda Research Optics Inc. (USA)
Type:
Filters
Diameter / Dimension:
12.7 - 50.8mm
Filter Category:
Colored Filter
Size Tolerance:
<+0.00/-0.25 mm
Surface Quality:
<60/40
Thickness:
2mm or 3mm (please specify)
4x4 Silicon Array Detectors
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Area
Light Spectrum:
VIS,NIR
Active Area:
1.96 mm²
Capacitance:
75
Dimensions:
1.4 x 1.4 mm
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