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< Sensing & Detection
Sensors & Detectors
CMOS
sCMOS
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InGaAs
IR
UV
Photodiodes
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kHz at Max. Res.
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FIR
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Multispectral
MWIR
NIR
SWIR
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24 products
Sensors & Detectors
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Cooled PbSe Detector: B2-8C1T
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
2 × 10^10 typ
Dark Resistance:
2.5 M Ohm at -25 °C typical
Delta T for TEC:
50 °C
Photodiode ODD-900-002
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
8 mm²
Operating Spectral Range:
400 nm - 1100 nm
Peak Sensitivity:
940 nm
Quad- 4-channel PbSe Detector w/ Filters: B1-5(M)-4 / B1-6C2T(M)-4
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1.4 × 10^10 cm Hz^.5W^-1 min
Dark Resistance-cooled model:
2.5 M Ohm typ
Delta T for TEC:
50 °C
PbSe Non-Cooled Detectors: B2-5
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1.8 × 10^ 10 cm Hz^.5W^-1 Typ
Dark Resistance:
1 M ohm
Package:
TO-5
S10226-10 CMOS Linear Image Sensor
Hamamatsu Corporation
Type:
CMOS
Max. Resolution:
1KP
Scan Type & Rate:
Linear
kHz at Max. Res.:
200
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
1024
Pixel Size:
7.8 um x 125 µm
Spectral Response Range:
400-1000 nm
S11639-01 CMOS Linear Image Sensor
Hamamatsu Corporation
Type:
CMOS
Max. Resolution:
2KP
Scan Type & Rate:
Linear
kHz at Max. Res.:
10000
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
2048
Pixel Size:
14 µm x 200 µm
Spectral Response Range:
200-1000 nm
PB55- Cooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
5.2 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 1.2 E+10 cm Hz 1/2 / W @ 90 Hz
PB50- Cooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
4.9 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 1.1 E+10 cm Hz 1/2 / W @ 90 Hz
PB45- Uncooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
4.7 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 6.0 E+09 cm Hz 1/2 / W @ 90 Hz
MST4323
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
10.3MP
Sensor Width:
4344
Sensor Height:
2368
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
120
Light Spectrum:
VIS
ADC Resolution:
11 bits @ LG/HG
Chroma:
RGB
Dynamic Range:
87 dB
S13255-2048-02 CCD Linear Image Sensor
Hamamatsu Corporation
Type:
CCD
Max. Resolution:
2KP
Scan Type & Rate:
Linear
kHz at Max. Res.:
10000
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
2048
Pixel Size:
14 µm x 500 µm
Spectral Response Range:
200-1100 nm
G13393-0808W InGaAs Area Image Sensor
Hamamatsu Corporation
Type:
InGaAs
Max. Resolution:
82KP
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
228
Light Spectrum:
NIR,SWIR
Number of Pixels:
320 x 256
Pixel Size:
20 x 20 µm
Spectral Response Range:
0.95-1.7 µm
IR Detector - BXP-25E
Opto Diode Corporation
Type:
IR
Light Spectrum:
NIR
Active Area:
4 mm²
Detectivity (D*) Ranges:
2.0 × 10(10) (D*)
Material:
PbSe
FPA0640P15F-17-T1 or T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
328KP
Sensor Width:
9.6
Sensor Height:
7.68
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
300
Light Spectrum:
SWIR
Package Type:
28-pin metal SDIP
Pixel Pitch:
15 μm
Quantum Efficiency:
>70%
Photodetector SXUV20C
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area (Circular):
20 mm²
Capacitance:
1.55 (typ.) to 3 (max.) nF
Rise Time:
2 µsec
S12101 CCD Area Image Sensor
Hamamatsu Corporation
Type:
CCD
Max. Resolution:
4MP
Scan Type & Rate:
Area
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
2048 x 2048
Pixel Size:
12 x 12 µm
Spectral Response Range:
165-1100 nm
19µm FHD CMOS Sensor
Canon U.S.A. Inc., Industrial Products Div.
Type:
CMOS
Max. Resolution:
2.2MP
Sensor Width:
2000
Sensor Height:
1128
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
100
Light Spectrum:
VIS,NIR
Filter Types:
RGB, Mono, RGB+IR
Pixel Pitch:
19µm
Sensor Size:
36.48mm x 20.52mm
Photodiode - APX 158-03-007
Advanced Photonix
Type:
InGaAs
Sensor Width:
3.375
Sensor Height:
3.375
Scan Type & Rate:
Linear
Light Spectrum:
VIS,NIR,SWIR
Breakdown Voltage:
9 (typ.) V
Dark Current:
3 (typ.) to 04 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts):
3 kΩ
Photodiode - APX 158-02-003
Advanced Photonix
Type:
InGaAs
Sensor Width:
2.25
Sensor Height:
2.25
Scan Type & Rate:
Linear
Light Spectrum:
VIS,NIR,SWIR
Breakdown Voltage:
9 (typ.) V
Dark Current:
2.5 (typ.) to 20 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts):
2.2 kΩ
PbS & PbSe IR Detectors (TO package)
trinamiX GmbH
Type:
IR
Light Spectrum:
NIR
PbS & PbSe Infrared Detectors
trinamiX GmbH
Type:
IR
Light Spectrum:
NIR
GSENSE400BSI-TVISB
Gpixel Inc.
Type:
sCMOS
Max. Resolution:
4MP
Sensor Width:
36.5
Sensor Height:
36.5
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
48
Light Spectrum:
UV,VIS,NIR
Dark Current:
0.03e-@-70C
Dynamic Range:
97.78 dB
Pixel Size:
11 µm
Nd:YAG 1064-nm Optimized Photodetectors
OSI Optoelectronics Inc.
Type:
IR
Light Spectrum:
VIS,NIR
5 to 14 mm Active area:
diameters
Nd:YAG:
sensitivity
Silicon Photomultipliers (SiPMs)
First Sensor Inc.
Type:
Other
Light Spectrum:
VIS,NIR
Sensors & Detectors Products
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