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50 products
Photonics Products
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photodiode sensors x
FEMTO OE-300 High Speed Photoreceiver
Electro Optical Components Inc.
Type:
Equipment
High Speed:
200MHz
Low Noise:
As low as 76fW
Variable Gain:
10^2 to 10^8 V/A
Photodiode NXIR-RF36
Opto Diode Corporation
Type:
Photodiodes
Active Area:
5 mm²
Responsivity @1064 nm:
0.38 A/W
Responsivity @850 nm:
0.65 A/W
Photodiode NXIR-RF100C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area:
1 mm²
Responsivity @1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
Photodiode ODD-900-001
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
mm2
Operating Spectral Range:
730 nm - 1100 nm
Peak Sensitivity:
940 nm
Photodiode ODD-900-002
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
8 mm²
Operating Spectral Range:
400 nm - 1100 nm
Peak Sensitivity:
940 nm
LDA512P25M-17-T1
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.512MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
22
Light Spectrum:
SWIR
Operating Temperature:
-20
Outputs:
2
Pixel Operability:
>99%
LDA1024P12.5S-17-T1
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
1KP
Sensor Width:
12.5
Sensor Height:
12.5
Scan Type & Rate:
Linear
kHz at Max. Res.:
22
Light Spectrum:
SWIR
Operating Temperature:
-20
Outputs:
2
Pixel Operability:
>99%
IG26- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.45 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.45 A/W
IG24- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.35 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG22- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.15 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG19- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
IG17- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
C30733 Series Avalanche Photodiodes
Excelitas Technologies Corp.
Type:
Photodiodes
InGaAs PIN Photodiode
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Light Spectrum:
SWIR
Aperture Size:
Ø 950 μm
Package Type:
TO-46 / 5P
Spectral Range:
0.9 - 1.7 μm
InGaAs PIN Photodiodes
Excelitas Technologies Corp.
Type:
Photodiodes
C30902SH Series Silicon APDs
Excelitas Technologies Corp.
Type:
Photodiodes
Large, Rectangular Photodiode - AXUV300C
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
21.56
Sensor Height:
15.36
Light Spectrum:
UV,VIS,NIR,Multispectral
Breakdown Voltage:
5 V, min.; 25 V typical
Capacitance:
25 nF, typical.; 40 nF, max.
Detection:
Radiation, Electrons, Photons
Photodiode UVG5S
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Active Area (circular):
5 mm2
Capacitance:
2 nF
Dark Current, ldr:
1 nA
Photodiode UVG100
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
100
Sensor Height:
100
Light Spectrum:
UV
Active Area:
100 mm²
Quantum Efficiency:
100%
Responsivity (test conditions at 254 nm):
0.09 A/W typical
LE / LSE Series Linear Photodiode Array
Sensors Unlimited Inc.
Type:
InGaAs
Max. Resolution:
1024MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
1.25
Light Spectrum:
SWIR
LDB / LSB Series Linear Photodiode Arrays
Sensors Unlimited Inc.
Type:
InGaAs
Max. Resolution:
512MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
5
Light Spectrum:
SWIR
Large, Square Radiation Detector: AXUV576C
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
576.5
Sensor Height:
576.5
Light Spectrum:
XRAY,Multispectral
Large, Square Active Area:
576.5 mm x 576.5 mm
Lead-SolderingTemperature:
260 °C
Min. Reverse Breakdown:
5V
Photodiode UVG5
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
5
Sensor Height:
5
Light Spectrum:
UV
Active Area (Circular):
Ø 5 mm2 (typ.)
Capacitance:
2 nanofarads (nF)
Responsivity @254 nm:
0.115 A/W (typ.)
Photodiode UVG20S
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Active Area (circular):
24 mm2
Responsivity @ 254 nm:
0.115 A/W (typical)
Rise Time:
4 µsec
Photodiode UVG20C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Capacitance:
4 nF (Typ.) to 10 nF (Max.)
Circular Active Area (Typ.):
19 mm²
Internal Quantum Efficiency:
100%
Photodiode UVG12
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV,VIS
Circular Active Area:
13.2 mm²
Detection Wavelength Range:
193 nm - 400 nm
Quantum Efficiency:
100% in UV and Visible Regions
Photodiode - AXUV20A
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
5.5
Sensor Height:
5.5
Light Spectrum:
UV,VIS,NIR
Capacitance:
4 nF, typical.; 10 nF, max.
Circular Photodiode:
5.5 mm²
Detection:
Radiation, Electron, Photon
Photodiode - AXUV63HS1
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
9
Sensor Height:
9
Light Spectrum:
XRAY
High-Speed Circular Active Area:
9 mm²
Lead-SolderingTemperature:
260 °C
Maximum Dark Current:
100 nA
Photodiode NXIR-5C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area (circular):
5 mm²
Responsivity @ 1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
Photodiode - AXUV20HS1
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
XRAY
Electron Detection:
200 eV
Grid lines:
5 µm
High-Speed Circular Active Area:
5 mm Ø
InGaAs Avalanche Photodiode
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Light Spectrum:
SWIR
Aperture Size:
Ø 200 μm
Package Type:
TO-46 / 5P
Spectral Range:
0.95 - 1.65 μm
Photodetector - AXUV100TF400
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
10 x 10 mm
Operating/Storage Temps. in ambient environments:
-10 °C to +40 °C
Operating/Storage Temps. in nitrogen or vacuum environments:
-20 °C to +80 °C
Photodetector - AXUV100TF030
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
10 x 10 mm
Operating/Storage Temps. in ambient environments:
-10 °C to +40 °C
Operating/Storage Temps. in nitrogen or vacuum environments:
-20 °C to +80 °C
G13393-0808W InGaAs Area Image Sensor
Hamamatsu Corporation
Type:
InGaAs
Max. Resolution:
82KP
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
228
Light Spectrum:
NIR,SWIR
Number of Pixels:
320 x 256
Pixel Size:
20 x 20 µm
Spectral Response Range:
0.95-1.7 µm
PD4B-80-P50-2G-K
LD4B UAB
Type:
Photodiodes
Light Spectrum:
NIR,SWIR
Bandwidth:
2 GHz
Dark current:
0.01 nA
Responsivity at 1550 nm:
0.85 A/W
BPR Series 200M Balanced Light Detection Module
Beijing Rofea Optoelectronics Co. Ltd.
Type:
InGaAs
Max. Resolution:
200MP
Light Spectrum:
XRAY,UV,VIS,NIR,SWIR,MWIR,LWIR,FIR,Multispectral
3dB bandwidth:
200MHz
Material type:
InGaAs/Si
APD10G1
Albis Optoelectronics AG
Type:
Photodiodes
Light Spectrum:
NIR
Optical damage threshold:
up to +5 dBm
Receiver sensitivity:
–34.5 dBm
Responsivity:
10 A/W
PQS40A-L
Albis Optoelectronics AG
Type:
Photodiodes
Light Spectrum:
NIR
Bandwidth:
40 GHz
Responsivity:
0.8 A/W
Photodiodes
Hitachi High-Tech America Inc., Optical Communications
Type:
Photodiodes
Light Spectrum:
Multispectral
Photodiode - APX 158-03-007
Advanced Photonix
Type:
InGaAs
Sensor Width:
3.375
Sensor Height:
3.375
Scan Type & Rate:
Linear
Light Spectrum:
VIS,NIR,SWIR
Breakdown Voltage:
9 (typ.) V
Dark Current:
3 (typ.) to 04 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts):
3 kΩ
Photodiode - APX 158-02-003
Advanced Photonix
Type:
InGaAs
Sensor Width:
2.25
Sensor Height:
2.25
Scan Type & Rate:
Linear
Light Spectrum:
VIS,NIR,SWIR
Breakdown Voltage:
9 (typ.) V
Dark Current:
2.5 (typ.) to 20 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts):
2.2 kΩ
Mulit-Element Arrays
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Linear
Light Spectrum:
UV,VIS,NIR
UV-Enhanced:
A5V-35UV
High-Speed Silicon Photodiodes
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Area
Light Spectrum:
UV,VIS,NIR
350 to 1100:
nm
Package:
TO=46
Peak Responsivity:
0.50A/W @ 800 nm
4x4 Silicon Array Detectors
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Area
Light Spectrum:
VIS,NIR
Active Area:
1.96 mm²
Capacitance:
75
Dimensions:
1.4 x 1.4 mm
2-Color Sandwich Detectors
OSI Optoelectronics Inc.
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Operation:
Photovoltaic
Spectral Range (TEC) Silicon/InGaAs_):
400-1800 nm
Spectral Range Silicon/InGaAs:
400-1800 nm
Series 9 Avalanche Photodiode
First Sensor Inc.
Type:
Other
Light Spectrum:
VIS,NIR
Wavelenght Range:
750 to 930 nm
Series 6 PIN Photodiode
First Sensor Inc.
Type:
Other
Light Spectrum:
VIS,NIR
PDI-80-2G-K
LASERSCOM LLC
Type:
InGaAs
Light Spectrum:
NIR
Back Reflection:
-50 dB
Cut-off Frequency:
2 GHz
Dark Current:
0.03 nA
APDI-55-3G-K
LASERSCOM LLC
Type:
InGaAs
Light Spectrum:
NIR
Cut-off Frequency:
3 GHz
Dark Current:
5 nA
Multiplication Coefficient:
80
RTG-Infinity Series
L and M Instruments LLC
Type:
Benchtop
Wavelength Range:
350 - 1100nm
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