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PIN PHOTODIODE

Photonics Spectra
May 2003
Hamamatsu CorporationRequest Info
 
The G8370-10 InGaAs PIN photodiode from Hamamatsu Corp. is suitable for laser diode applications, including design into power monitors. The device has a spectral response of 0.9 to approximately 1.7 µm and a ceramic package that can operate over a temperature range of –25 to 70 °C. Typical specifications include peak sensitivity of 0.95 A/W at 1.55 µm, dark current of 0.2 µA, polarization-dependent loss of 5 mdB and photoresponse nonuniformity of ±2%. The G8370-10 photodiode measures 16.5 x 15 x 12.7 mm and has a Ø10-mm active area.


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GLOSSARY
PIN photodiode
A diode with a large intrinsic region sandwiched between P-doped and N-doped semiconducting regions. Photons absorbed in this region create electron-hole pairs that are then separated by an electric field, thus generating an electric current in a load circuit.
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