Hamamatsu Corp. has developed the G6742 series of InGaAs PIN photodiodes for laser diode monitoring. Mounted in a small ceramic chip-carrier package, they have a spectral response range of 0.9 to 1.7 µm with peak sensitivity at 1.55 µm. Photosensitivity is 0.9 A/W at 1.3 µm and 0.95 at 1.55 µm. The G6742-003 has a 0.3-mm-diameter active area and a 300-MHz cutoff frequency, while the G6742-01 has a 1-mm active area and cutoff frequency of 35 MHz. Dark current for both models is 0.3 nA.