Wide-Emission IR LED
Jan 2012Opto Diode CorporationRequest Info
NEWBURY PARK, Calif., Jan. 20, 2012 — Opto Diode Corp., a division of ITW and a member of the ITW Photonics Group, has announced the first of a family of three new infrared emitters.
The OD-850W GaAlAs LED features a wide emission angle for coverage over a large area, minimum optical output of 30 mW, with 40 mW, typical at 100 mA, and a peak emission wavelength at 850 nm. It is an upgrade and replacement for the company’s OD-880W IR LEDs, offering nearly double the output power, added stability and less degradation. The 850-nm wavelength is more closely matched to the peak response of phototransistors and opto integrated circuits, making them suitable for industrial control applications such as photoelectric controls and optical encoders.
Hermetically sealed, the standard TO-46 package is designed with gold-plated surfaces and welded caps for added durability. The IR LED offers continuous forward current at 100 mA and peak forward current at 300 mA (absolute maximum ratings at 25 °C). Storage and operating temperatures range from −40 to 100 °C, with a maximum junction temperature of 100 °C.