Nov 1999Applied Optoelectronics Inc. (AOI)Request Info
Applied Optoelectronics Inc. and the Space Vacuum Epitaxy Center at the University of Houston have collaborated to create a dual-wavelength mid-IR semiconductor laser. It operates at 110 K and produces a total peak output of 150 mW per uncoated output facet under pulsed operation. The laser emits at 4.482 and 4.568 µm with a threshold current density of less than 120 A/cm2. External quantum efficiency is 278% for a 0.4-mm cavity length with an injection current of 500 mA. The device is suitable for chemical sensing applications where one wavelength is tuned to a molecular absorption line and the other is used for baseline correction.