Semiconductors Etch Easier with New Method
CHAMPAIGN, Ill., Jan. 4, 2012 — A method that chemically etches patterned arrays in the semiconductor gallium arsenide will make high-end optoelectronic devices easier to create. A team of researchers led by Xiuling Li, an electrical and computer engineering professor at the University of Illinois, developed the etching method in gallium arsenide, which is used in solar cells, lasers, LEDs, field effect transistors, capacitors and sensors. The researchers’ technique was described in Nano Letters. The physical pro...